13 results
UV Raman Study of A1(LO) and E2 Phonons in InGaN Alloys Grown by Metal-Organic Chemical Vapor Deposition on (0001) Sapphire Substrates
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- Journal:
- MRS Online Proceedings Library Archive / Volume 639 / 2000
- Published online by Cambridge University Press:
- 17 March 2011, G9.7
- Print publication:
- 2000
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Epitaxial Lateral Overgrowth of GaN on SiC and Sapphire Substrates
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 447-452
- Print publication:
- 1999
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Optical Absorption, Raman, and Photoluminescence Excitation Spectroscopy of Inhomogeneous InGaN Films
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 221-226
- Print publication:
- 1999
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A Critical Comparison Between MOVPE and MBE Growth of III-V Nitride Semiconductor Materials for Opto-Electronic Device Applications
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- Journal:
- Materials Research Society Internet Journal of Nitride Semiconductor Research / Volume 4 / Issue S1 / 1999
- Published online by Cambridge University Press:
- 13 June 2014, pp. 594-599
- Print publication:
- 1999
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Optical Absorption, Raman, and Photoluminescence Excitation Spectroscopy of Inhomogeneous InGaN Films
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- Journal:
- MRS Online Proceedings Library Archive / Volume 537 / 1998
- Published online by Cambridge University Press:
- 15 February 2011, G3.22
- Print publication:
- 1998
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Epitaxial Lateral Overgrowth of GaN on SiC and Sapphire Substrates
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- Journal:
- MRS Online Proceedings Library Archive / Volume 537 / 1998
- Published online by Cambridge University Press:
- 15 February 2011, G4.3
- Print publication:
- 1998
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A Critical Comparison Between Movpe and MBE Growth of III-V Nitride Semiconductor Materials for Opto-Electronic Device Applications
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- Journal:
- MRS Online Proceedings Library Archive / Volume 537 / 1998
- Published online by Cambridge University Press:
- 15 February 2011, G5.10
- Print publication:
- 1998
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A Model for Indium Incorporation in the Growth of InGaN Films
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- Journal:
- MRS Online Proceedings Library Archive / Volume 449 / 1996
- Published online by Cambridge University Press:
- 10 February 2011, 85
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- 1996
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New Buffer Layers for GaN on Sapphire by Atomic Layer and Molecular Stream Epitaxy
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- Journal:
- MRS Online Proceedings Library Archive / Volume 395 / 1995
- Published online by Cambridge University Press:
- 21 February 2011, 307
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- 1995
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Low-Temperature Growth of High Quality InxGa1−xN by Atomic Layer Epitaxy
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- Journal:
- MRS Online Proceedings Library Archive / Volume 395 / 1995
- Published online by Cambridge University Press:
- 21 February 2011, 213
- Print publication:
- 1995
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Ordered Ternary Alloys by Atomic Layer Epitaxy
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- Journal:
- MRS Online Proceedings Library Archive / Volume 160 / 1989
- Published online by Cambridge University Press:
- 28 February 2011, 365
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- 1989
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Atomic Layer Epitaxy of GaAs on Si by Mocvd
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- Journal:
- MRS Online Proceedings Library Archive / Volume 145 / 1989
- Published online by Cambridge University Press:
- 28 February 2011, 331
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- 1989
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Migration-Enhanced Molecular Beam Epitaxial Growth and Characterization of GaAs on Si Substrates
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- Journal:
- MRS Online Proceedings Library Archive / Volume 144 / 1988
- Published online by Cambridge University Press:
- 26 February 2011, 279
- Print publication:
- 1988
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